DMN2004WK
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT-323
Dim Min Max Typ
G
H
B C
A
B
C
D
G
H
0.25 0.40 0.30
1.15 1.35 1.30
2.00 2.20 2.10
- - 0.65
1.20 1.40 1.30
1.80 2.20 2.15
K
M
J
K
0.0 0.10 0.05
0.90 1.00 0.95
J
D
L
L
M
??
0.25 0.40 0.30
0.10 0.18 0.11
0° 8° -
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
DMN2004WK
Document number: DS30934 Rev. 5 - 2
X
E
C
5 of 6
www.diodes.com
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
September 2013
? Diodes Incorporated
相关PDF资料
DMN2005DLP4K-7 MOSFET DUAL N-CH 6-DFN
DMN2005K-7 MOSFET N-CH 20V 300MA SOT23-3
DMN2005LP4K-7 MOSFET N-CH 20V 200MA 3-DFN
DMN2005LPK-7 MOSFET N-CH 20V 440MA 3-DFN
DMN2009LSS-13 MOSFET N-CH 20V 12A 8-SOIC
DMN2013UFDE-7 MOSF N CH 20V 10.5A U-DFN2020-6
DMN2015UFDE-7 MOSF N CH 20V 10.5A U-DFN2020-6E
DMN2016LFG-7 MOSFET N CH DUAL 20V 5.2A
相关代理商/技术参数
DMN2005DLP4K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005DLP4K_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005DLP4K-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2005K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K_0711 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2005LP4K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LP4K_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR